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IPDiA's technology awarded with the 'Grand Prix Siemens de l'Innovation'
For its 10th birthday, the 'Grand Prix Siemens de l'Innovation' has been awarded to IPDiA.The previous years, Saint Gobain, Novartis or PSA Peugeot Citroën have reached the podium.
CAEN, FRANC,E September 14, 2011 /HiTech PR News/ -- This year, IPDiA has stood apart from the others thanks to its PICS technology (Passive Integration Connecting Substrate). This patented technology is using the thickness of the silicon to integrate hundreds of passive components, which allows to reduce the device area while increasing the components density and also their performance. These passives play the role of a filter or a protection to the actives namely, processors, reception circuits, amplifiers...The silicon itself brings a level of integration and of miniaturization that has never been reached so far, as well as a level of electrical performance 10 times better than what is obtained with the standard ceramic components.
Some smaller, more reliable electronic devices, less energy eaters have started to be on the market. These features fit perfectly the requirements set by some specific areas such as smart metering (e-metering), implantable medical devices, mobile or embedded electronic devices...
The award
Each year, the competitors are judged by a panel of expert judges and have to satisfy several criteria: investments and R&D programs, patent registrations, number of partnerships made, technological progress. Productivity, competitiveness, environment protection and improvement brought to end users have also been key factors in the final decision.
About IPDiA
IPDiA is a preferred supplier of high performance, high stability and high reliability silicon passive components to customers in the medical, automotive, communication, computer, industrial, and defense/aerospace markets.
The company portfolio includes standard component devices such as silicon capacitors, RF filters, RF baluns, ESD protection devices as well as customized devices.
IPDiA headquarters are located in Caen, France. The company operates design centers, sales and marketing offices and a manufacturing facility certified ISO 9001 / 14001 / 18001 as well as ISO TS 16949 for the Automotive market.
Please visit our website www.ipdia.com
The creation of IPDiA is the result of more than 10 years of Research and Development carried out in large international groups - Philips & NXP - which led to the invention of innovative 3D technologies to integrate Passive Devices.
With the support of new investors, the IPDiA team created this independent company to serve new markets, following a completely new strategy designed to win new business as well as retain existing customers.
IPDiA's primary objective is to focus on two main axes: Integrated Devices for high brightness LEDs and Integrated Passive Devices for new markets such as medical, industrial, aerospace and defense.
IPDiA's technological lead in components for lighting, LEDs and integrated passive devices will enable the company to capitalize on this know-how acquired over the last few years and which earned IPDiA its position as a major player on the world market.
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Press Release Contact Information:
clémence Lesage
IPDiA
Communication Assistant
2 rue de la Girafe
Caen, France
France 14000
Voice: +33 (0)2 31 53 54 06
Website: Visit Our Website |
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